Ming-Yi Yan

Title: Innovations of Ming-Yi Yan

Introduction

Ming-Yi Yan is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory technology and optoelectronics. With a total of 2 patents, his work showcases innovative approaches to memory cell design and LED technology.

Latest Patents

Ming-Yi Yan's latest patents include a memory cell with functions of a storage element and selector. This innovative memory cell comprises a P-type layer, a tunneling structure, and an N-type layer. The tunneling structure is formed on the P-type layer, while the N-type layer is built on the tunneling structure. By adjusting the bias voltage applied to the P-type and N-type layers, the tunneling structure can be controlled to switch between amorphous and crystalline states, enabling both memorizing and storing functions.

Another significant patent is for a white LED, which consists of a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure in this design is a stack structure that includes a first barrier layer, a first active layer, and a second barrier layer. At least one of these layers is a first metal nitride oxide layer, enhancing the LED's performance.

Career Highlights

Ming-Yi Yan is currently employed at Opto Tech Corporation, where he continues to develop cutting-edge technologies in the field of optoelectronics. His work has been instrumental in advancing the capabilities of memory cells and LED devices.

Collaborations

Ming-Yi Yan has collaborated with notable coworkers, including Lung-Han Peng and Jhih-You Lu. Their combined expertise has contributed to the successful development of innovative technologies.

Conclusion

Ming-Yi Yan's contributions to the fields of memory technology and optoelectronics highlight his role as a leading inventor. His patents reflect a commitment to innovation and advancement in technology.