The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jan. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Jiun-Yun Li, Taipei, TW;
Nai-Wen Hsu, Pingtung County, TW;
Wei-Chih Hou, Taichung, TW;
Yu-Jui Wu, Taipei, TW;
Yen Chuang, Kaohsiung, TW;
Chia-Yu Liu, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.