Pingtung, Taiwan

Jiun-Ren Lai

This inventor holds 8 USPTO granted patents. Top assignees: Macronix International Co., Ltd., Other. Active years: 2002-2005.


% Patents Active = 100.0

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 267(Granted Patents)


Location History:

  • Hsinchu, TW (2003 - 2004)
  • Ping-Tung, TW (2002 - 2005)

Company Filing History:


Years Active: 2002-2005

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8 patents (USPTO):Explore Patents

Title: Jiun-Ren Lai: Innovator in Semiconductor Technology

Introduction

Jiun-Ren Lai is a prominent inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His innovative work focuses on improving device resistance and enhancing the functionality of flash memory.

Latest Patents

Among his latest patents, one notable invention is the "Method of improving device resistance - A buried bit line and a fabrication method thereof." This patent describes a memory device that includes a substrate with a shallow doped region and a deep doped region, which together form a bit line. Another significant patent is the "Method for forming an electrical insulating layer on bit lines of the flash memory." This method outlines a detailed process for creating an electrical insulating layer on flash memory bit lines, involving multiple layers and etching techniques to achieve optimal results.

Career Highlights

Jiun-Ren Lai has worked with several companies throughout his career, including Macronix International Co., Ltd. His experience in the semiconductor industry has allowed him to develop cutting-edge technologies that enhance memory devices.

Collaborations

Some of his notable coworkers include Chien-Wei Chen and Chun-Yi Yang, who have collaborated with him on various projects in the semiconductor field.

Conclusion

Jiun-Ren Lai's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of memory devices.

Profile summary based on public USPTO records.
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