The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2003

Filed:

Dec. 20, 2001
Applicant:
Inventor:

Jiun-Ren Lai, Pingtung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A method for fabricating a NROM is described, in which a bottom anti-reflective coating (BARC) and a photoresist pattern are sequentially formed on a substrate that has a charge trapping layer formed thereon. An etching process is then performed to pattern the BARC and the charge trapping layer with the photoresist pattern as a mask. The etching process is conducted in an etching chamber equipped with a source power supply and a bias power supply, which two have a power ratio of 1.5˜3, while an etchant used therein is a gas plasma containing trifluoromethane (CHF ) and tetrafluoromethane (CF ). Thereafter, a buried drain is formed in the substrate, a buried drain oxide layer is formed on the buried drain, and then plural gates are formed on the substrate.


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