The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2003

Filed:

Jun. 12, 2002
Applicant:
Inventor:

Jiun-Ren Lai, Hsinchu, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/122 ; H01L 2/138 ;
U.S. Cl.
CPC ...
H01L 2/122 ; H01L 2/138 ;
Abstract

A method is described which may be used to reduce a pitch between conductive features. One embodiment of the method involves forming a structure including a substrate, a conductive layer on the substrate, multiple photoresist features arranged on the conductive layer, a polymer layer on top surfaces and sidewalls of each of the photoresist features, and a material layer on and around the photoresist features and the polymer layers. An upper portion of the material layer is removed such that upper surfaces of the photoresist features and the polymer layer are exposed, and a remaining portion of the material layer remains. The polymer layer is removed, and the photoresist features and the remaining portion of the material layer are used as etch masks to pattern the conductive layer, thereby producing a number of conductive features. The photoresist features and the remaining portion of the material layer are removed.


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