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For the Inventor, By the Inventor

Chiayi, Taiwan

Jinn-Shyan Wang

This inventor holds 27 USPTO granted patents and 1 published patent application, primarily in Memory Device Technology. Top assignees: National Chung Cheng University, National Science Council of Republic of China, Jiun-In Guo. Active years: 1999-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinn-Shyan Wang. Retrieved from https://idiyas.com/inventor/jinn-shyan-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 48.1

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 49(Granted Patents)


Location History:

  • Chia-Yi Hsien, TW (2000)
  • Ming-Hsiung, Chia-Yi, TW (2008 - 2010)
  • Min-Hsiung, TW (2010)
  • Lucuo Village, TW (2010)
  • Chia-Yi, TW (1999 - 2023)

Company Filing History:

goldMedal18 out of 215 
 
National Chung Cheng University
 patents
silverMedal2 out of 53 
 
National Science Council of Republic of China
 patents
bronzeMedal1 out of 1 
 
Jiun-In Guo
 patent
4. 6 out of 834,513 
Other
 patents

Years Active: 1999-2023

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Areas of Expertise:
Personalized Voice Conversion
Low-Voltage Memory
Dynamic Voltage Scaling
Content Addressable Memory
Clock De-Skewing
Video Compression
Static RAM
Digital Image Processing
Low Power Logic Circuits
Timing Error Correction
Memory Circuit Design
27 patents (USPTO):Explore Patents
1. 11741968 - Personalized voice conversion system (2023-08-29),
2. 11404112 - Low-voltage low-power memory device with read, write, hold, and standby assist voltages and operation method thereof (2022-08-02),
3. 11309016 - Variable-latency device to reduce sense error in multi-level multi-bit sensing scheme (2022-04-19),
4. 10971196 - Single-ended sense amplifier (2021-04-06),
5. 10282209 - Speculative lookahead processing device and method (2019-05-07),
6. 10127976 - Static random access memory cell array, static random access memory cell and operating method thereof (2018-11-13),
7. 9755620 - Device for detecting and correcting timing error and method for designing typical-case timing using the same (2017-09-05),
8. 8933726 - Dynamic voltage scaling system having time borrowing and local boosting capability (2015-01-13),
9. 8824185 - NOR-type ROM with hierarchical-BL structure, dynamic segmentation shielding, and source programming (2014-09-02),
10. 8743592 - Memory circuit properly workable under low working voltage (2014-06-03),
11. 8294498 - Clock de-skewing delay locked loop circuit (2012-10-23),
12. 8111756 - Method for reducing computational complexity of video compression standard (2012-02-07),
13. 8090019 - Intra prediction circuit device applied to the H.264 video coding standard (2012-01-03),
14. 8000120 - Read and match circuit for low-voltage content addressable memory (2011-08-16),
15. 7865025 - Data processing method in embedded block coding with optimized truncation module (2011-01-04),

Title: The Innovative Contributions of Jinn-Shyan Wang

Introduction

Jinn-Shyan Wang, based in Chia-Yi, Taiwan, is a notable inventor with a remarkable portfolio of 27 patents. His innovations primarily focus on voice conversion systems and advanced memory devices, showcasing his expertise in electrical engineering and technology.

Latest Patents

Wang's latest patents highlight cutting-edge advancements in voice technology and memory systems. One of his notable inventions is the "Personalized Voice Conversion System." This system incorporates a cloud server and intelligent device to convert an original voice signal into an intelligible voice signal through a specialized conversion model. The intelligent device interacts seamlessly with the cloud server, facilitating the downloading and playback of the converted voice signal. Furthermore, it utilizes offline voice conversion models to enhance user experience even when disconnected from the cloud.

Another significant patent is the "Low-voltage Low-power Memory Device." This device features a static random access memory (SRAM) cell and a sophisticated power-supply assist-voltage generator circuit. It aims to effectively manage voltage levels for memory cells in various modes, achieving significant reductions in active and standby power consumption while ensuring stability and enhancing noise margins.

Career Highlights

Wang has had a distinguished career, including his tenure at National Chung Cheng University. His work at this esteemed institution not only attests to his proficiency as an engineer but also reflects his commitment to pushing the boundaries of technology. Wang continues to contribute valuable insights into the fields of voice processing and memory technology.

Collaborations

Throughout his career, Jinn-Shyan Wang has collaborated with talented individuals such as Ching-Wei Yeh and Tay-Jyi Lin. These collaborations exemplify the importance of teamwork in the realm of innovation, where diverse ideas and expertise come together to create groundbreaking solutions.

Conclusion

Jinn-Shyan Wang's impressive array of patents and his pioneering work in voice conversion systems and memory devices underline his impact on modern technology. As he continues to innovate, his contributions will undoubtedly shape future advancements in these fields, inspiring the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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