The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jul. 21, 2017
Applicant:

National Chung Cheng University, Chia-Yi, TW;

Inventors:

Jinn-Shyan Wang, Chia-Yi, TW;

Yung-Chen Chien, Chia-Yi, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01);
Abstract

A static random access memory cell includes a controlling signal line unit, a latch and an access transistor unit. The first bottom transistor unit is controlled by the controlling signal line unit to change voltage levels of the first pseudo node and the second pseudo node. The second bottom transistor unit is controlled by the first internal node to perform connection and disconnection between the controlling signal line unit and the second pseudo node, and the second bottom transistor unit is controlled by the second internal node to perform connection and disconnection between the controlling signal line unit and the first pseudo node. The access transistor unit is controlled by the controlling signal line unit to perform connection and disconnection between the controlling signal line unit, the first pseudo node and the second pseudo node.


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