The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Oct. 19, 2020
Applicant:

National Chung Cheng University, Chia-Yi, TW;

Inventors:

Jinn-Shyan Wang, Chia-yi, TW;

Chien-Tung Liu, Changhua County, TW;

Hao-Ping Wang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/417 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01);
Abstract

A memory device and an operation method thereof is disclosed. The memory device includes a static random access memory (SRAM) cell, a power-supply assist-voltage generator circuit, a source assist-voltage generator circuit, and a word-line assist-voltage generator circuit. The power-supply assist-voltage generator circuit, the source assist-voltage generator circuit, and the word-line assist-voltage generator circuit lower the effective supply voltage for un-accessed rows of memory cells in the hold mode, increase the effective supply voltage for accessed memory cells in the active mode, and lower the effective supply voltage further for all the SRAM cells in the standby mode to achieve a solution for active and standby power reduction besides achieving the stability and noise margins.


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