Shanghai, China

Jinghua Ni

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International Corp.. Active years: 2005-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinghua Ni. Retrieved from https://idiyas.com/inventor/jinghua-ni

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 100.0

Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2005-2017

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11 patents (USPTO):Explore Patents

Title: Innovator Jinghua Ni: Pioneering Semiconductor Technologies in Shanghai

Introduction

Jinghua Ni is a prominent inventor based in Shanghai, China, known for his significant contributions to the semiconductor industry. With a total of 11 patents to his name, he has played a crucial role in advancing manufacturing techniques that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations, Jinghua Ni developed two noteworthy patents. The first patent is a "Method of Manufacturing a Semiconductor Device." This innovative method involves providing a semiconductor substrate that includes a transistor and a dummy gate. The process includes the removal of the dummy gate, treatment of the semiconductor substrate with hydrogen to eliminate residual materials, and the subsequent formation of a metal gate on the transistor.

Another significant patent is titled "Method for Chemical Mechanical Polishing of High-K Metal Gate Structures." This method outlines the manufacturing process for a semiconductor device, which begins with a substrate and a dielectric layer. The procedure includes the use of a reactive gas to remove the first hard mask layer without damaging the dielectric layer, ultimately enhancing the performance and yield of the semiconductor device.

Career Highlights

Throughout his career, Jinghua Ni has worked with reputable organizations such as Semiconductor Manufacturing International Corporation and Semiconductor Manufacturing International Corp. His commitment to innovation and excellence in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Jinghua has collaborated with talented individuals, including Aileen Li and Eugene Wang, who have contributed to his projects and research efforts. These collaborations have fueled advancements in semiconductor manufacturing techniques.

Conclusion

Jinghua Ni continues to be a driving force in the semiconductor field with his innovative patents and collaborative spirit. His work not only enhances semiconductor manufacturing but also sets the stage for future developments in the technology sector. As an inventor, his contributions are invaluable to the ongoing evolution of semiconductor devices, reaffirming the importance of innovation in driving industry progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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