The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 11, 2015
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82345 (2013.01); H01L 21/28008 (2013.01); H01L 27/088 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes providing a substrate, a dielectric layer on the substrate, a first hard mask layer on the substrate, and a second hard mask layer on the first hard mask layer. The method also includes removing the first hard mask layer using a reactive gas that does not cause damage to the dielectric layer to improve the performance and yield of the semiconductor device.