The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Sep. 10, 2013
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Abstract
Various embodiments provide semiconductor structures and fabrication methods. In an exemplary method, a semiconductor substrate can contain a shallow trench isolation (STI) structure that includes a fuse region. A protective layer can be provided on the high-K dielectric layer, which is provided on the semiconductor substrate. A portion of each of the protective layer and the high-K dielectric layer can be removed from the fuse region to expose the STI structure. A fuse layer can be formed on the exposed surface of the STI structure. A portion of the fuse layer, the remaining portion of the protective layer, and a remaining portion of the high-K dielectric layer outside of the fuse region can be removed from the semiconductor substrate to form a fuse structure.