The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Jan. 30, 2015
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Fenglian Li, Shanghai, CN;
Jinghua Ni, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/70 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/02071 (2013.01); H01L 21/823842 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate including a transistor and a dummy gate disposed on the transistor, removing the dummy gate on the transistor, performing treatment using hydrogen (H) on a surface of the semiconductor substrate, so as to remove residue materials left behind from the removal of the dummy gate, and forming a metal gate on the transistor.