Company Filing History:
Years Active: 2015-2017
Title: Fenglian Li: Innovator in Semiconductor Manufacturing
Introduction
Fenglian Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor manufacturing, holding two patents that showcase his innovative approaches to device fabrication.
Latest Patents
Fenglian Li's latest patents include a method of manufacturing a semiconductor device and a method for fabricating MOS transistors. The first patent outlines a process that involves providing a semiconductor substrate with a transistor and a dummy gate, removing the dummy gate, and treating the substrate with hydrogen to eliminate residue. This method culminates in the formation of a metal gate on the transistor. The second patent details a fabrication method for MOS transistors, which includes creating a poly silicon dummy gate structure with a high-K gate dielectric layer. This method also involves forming source and drain regions, removing the dummy gate, and performing a nitrogen treatment to repair defects in the dielectric layer.
Career Highlights
Fenglian Li is currently employed at Semiconductor Manufacturing International Corporation, a leading company in the semiconductor industry. His work focuses on advancing manufacturing techniques that enhance the performance and reliability of semiconductor devices.
Collaborations
Fenglian Li collaborates with various professionals in the field, including his coworker Jinghua Ni. Their combined expertise contributes to the innovative projects at their company.
Conclusion
Fenglian Li's contributions to semiconductor manufacturing through his patents and collaborative efforts highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor technology.