Semiconductor Manufacturing International (Shanghai) Corporation

Fenglian Li

Jinghua Ni

A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate including a transistor and a dummy gate disposed on the transistor, removing the dummy gate on the transistor, performing treatment using hydrogen (H) on a surface of the semiconductor substrate, so as to remove residue materials left behind from the removal of the dummy gate, and forming a metal gate on the transistor.

Method of manufacturing a semiconductor device

A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method also includes forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure. Further, the method includes removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen and performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate. Further, the method also includes forming a metal gate structure in the trench.

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Shanghai, China

Fenglian Li