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For the Inventor, By the Inventor

Seoul, South Korea

Jin-Yub Lee

USPTO Granted Patents = 60 


Average Co-Inventor Count = 1.8

ph-index = 14

Forward Citations = 621(Granted Patents)


Inventors with similar research interests:


Location History:

  • Seocho-gu, KR (2007 - 2010)
  • Seoul, KR (2001 - 2017)

Company Filing History:

goldMedal60 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2017

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Areas of Expertise:
Nonvolatile Memory Device
Flash Memory Device
Semiconductor Memory Device
Voltage Supply Controller
Erase Voltage Generator Circuit
Multi-Bit Flash Memory
Cache Reading Method
Program Verification
Dual Chip Package
Internal Clock Generator
Reference Voltage Generating Circuit
Data Transmission Reduction
60 patents (USPTO):Explore Patents
1. 9711235 - Nonvolatile memory device, storage device having the same, operating method thereof (2017-07-18),
2. 8982620 - Non-volatile memory device and method of operating (2015-03-17),
3. 8929171 - Voltage supply controller, nonvolatile memory device and memory system (2015-01-06),
4. 8760919 - Nonvolatile memory device and method of reading data in nonvolatile memory device (2014-06-24),
5. 8301829 - Flash memory device and flash memory system including buffer memory (2012-10-30),
6. 8289770 - Semiconductor memory device and system including the same (2012-10-16),
7. 8209460 - Dual memory chip package operable to access heterogeneous memory chips (2012-06-26),
8. 7990129 - Reference voltage generating circuit (2011-08-02),
9. 7949819 - Flash memory device and method of changing block size in the same using address shifting (2011-05-24),
10. 7908425 - Method and device for performing cache reading (2011-03-15),
11. 7907454 - Method of verifying programming operation of flash memory device (2011-03-15),
12. 7876613 - Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards (2011-01-25),
13. 7839717 - Semiconductor device with reduced standby failures (2010-11-23),
14. 7835193 - Flash memory device and method of erasing flash memory device (2010-11-16),
15. 7813184 - Multi-block memory device erasing methods and related memory devices (2010-10-12),

Title: The Innovative Journey of Jin-Yub Lee: A Leader in Non-Volatile Memory Technology

Introduction: Jin-Yub Lee, based in Seoul, South Korea, is a prominent inventor renowned for his contributions to the field of non-volatile memory technology. With an impressive portfolio of 60 patents, Lee has established himself as a significant figure in the advancement of digital storage solutions.

Latest Patents: Jin-Yub Lee's latest innovations include a groundbreaking non-volatile memory device along with an operating method. This memory device features a voltage-generating circuit designed to produce voltages that are applied to word lines corresponding to selected memory blocks. The innovative design incorporates voltage source lines with linear voltages, as well as multiple voltage-generating units that enhance the overall performance of the device. Furthermore, his method of operating this non-volatile memory encompasses the critical processes of reading control and lock information, ensuring data security within secure blocks.

Career Highlights: Throughout his career, Jin-Yub Lee has been associated with Samsung Electronics Co., Ltd., where he has played a vital role in developing advanced storage technologies. His dedication to innovation has not only advanced his company’s product offerings but has also set new benchmarks in the semiconductor industry, particularly in non-volatile memory solutions.

Collaborations: Jin-Yub Lee's work has often been in collaboration with notable peers, including Dae-Sik Park and Sang-Won Hwang. These partnerships have fostered an environment of innovation and excellence, allowing the team to successfully tackle complex challenges in memory technology.

Conclusion: Jin-Yub Lee stands as a testament to the power of innovation in the tech industry. His extensive patent portfolio and collaborations reflect a commitment to advancing memory technology, making significant contributions that enhance data storage capabilities for future generations. As the exploration of non-volatile memory continues, Lee's work will undoubtedly leave a lasting impact on the landscape of digital technology.

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