The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Oct. 08, 2008
Applicants:

Min-gun Park, Yongin-si, KR;

Jin-yub Lee, Seoul, KR;

Inventors:

Min-Gun Park, Yongin-si, KR;

Jin-yub Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is provided for verifying a programming operation of a flash memory device. The flash memory device includes at least one memory string in which a string selection transistor, multiple memory cells and a ground selection transistor are connected in series, and the programming operation is performed with respect to a selected memory cell in the memory string. The method includes applying a voltage, obtained by adding a threshold voltage of the string selection transistor to a power supply voltage, to a string selection line connected to the string selection transistor; applying a ground voltage to wordlines connected to each of the memory cells and a ground selection line connected to the ground selection transistor; precharging a bitline connected to the memory string to the power supply voltage; and determining whether a programming operation of the selected memory cell is complete.


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