The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 17, 2016
Venkataramana Gangasani, Suwon-si, KR;
Jin-yub Lee, Seoul, KR;
Sungwhan Seo, Hwaseong-si, KR;
Won-tae Kim, Seongnam-si, KR;
Dojeon Lee, Seoul, KR;
Yohan Lee, Incheon, KR;
Venkataramana Gangasani, Suwon-si, KR;
Jin-Yub Lee, Seoul, KR;
Sungwhan Seo, Hwaseong-si, KR;
Won-Tae Kim, Seongnam-si, KR;
Dojeon Lee, Seoul, KR;
Yohan Lee, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a voltage generating circuit configured to generate voltages applied to word lines corresponding to a selected memory block among memory blocks. The voltage generating circuit includes voltage source lines having linear voltages, a first voltage generating unit configured to generate a first voltage and apply the generated first voltage to a first voltage source line among the voltage source lines, a second voltage generating unit configured to generate a second voltage and apply the generated second voltage to a second voltage source line among the voltage source lines, and a linear voltage generator having a resistor string connected between the first voltage source line and the second voltage source line. At least one of the voltage source lines has a voltage distributed between the first voltage and the second voltage.