The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Aug. 30, 2012
Jung-ho Song, Suwon-Si, KR;
Jin-yub Lee, Seoul, KR;
Jae-woo Im, Hwaseong-Si, KR;
Seung-jae Lee, Hwaseong-Si, KR;
Sang-so Park, Hwaseong-Si, KR;
Jung-Ho Song, Suwon-Si, KR;
Jin-Yub Lee, Seoul, KR;
Jae-Woo Im, Hwaseong-Si, KR;
Seung-Jae Lee, Hwaseong-Si, KR;
Sang-So Park, Hwaseong-Si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.