Jin Woo Moon

Title: Jin Woo Moon: Innovator in Semiconductor Technology

Introduction

Jin Woo Moon is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Jin Woo Moon's latest patents is for a lateral double-diffused MOS transistor that features a deeper drain region than the source region. This semiconductor power device includes a well disposed in a substrate, a gate overlapping the well, a source region located at one side of the gate, a buried layer in the well, and a drain region or drift region that contacts the buried layer. Another notable patent involves a method of fabricating a LDMOS device with a first well depth that is less than a second well depth. This method allows for the fabrication of a semiconductor device capable of increasing breakdown voltage without the need for an additional epitaxial layer or buried layer, particularly in high-voltage horizontal MOSFET applications.

Career Highlights

Jin Woo Moon is currently employed at Magnachip Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His expertise and inventions have positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Jin Woo Moon has collaborated with notable colleagues, including Francois Hebert and Young Bae Kim. These partnerships have contributed to the advancement of semiconductor research and development.

Conclusion

Jin Woo Moon's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry positively, paving the way for future innovations.