The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Aug. 06, 2014
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Francois Hebert, San Mateo, CA (US);
I-Shan Sun, San Jose, CA (US);
Young Bae Kim, Cheongju-si, KR;
Young Ju Kim, Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
In Taek Oh, Cheongju-si, KR;
Jin Woo Moon, Cheongju-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/266 (2013.01); H01L 29/0634 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7835 (2013.01);
Abstract
A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.