The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 23, 2013
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Francois Hebert, Cheongju-si, KR;
Young Bae Kim, Cheongju-si, KR;
Jin Woo Moon, Cheongju-si, KR;
Kyung Ho Lee, Cheongju-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed in the well; an oxide layer that insulates a gate region from the drain region; a first conductivity type buried layer formed in the well; a second conductivity type drift region surrounding the buried layer; and a second conductivity type TOP region formed between the buried layer and the oxide layer.