Magnachip Semiconductor, Inc.

Jin Woo Moon

Francois Hebert

Young Bae Kim

Kwang Il Kim

Kyung Ho Lee

I-Shan Sun

In Taek Oh

Young Ju Kim

Provided is a semiconductor power device. The semiconductor power device includes a well disposed in a substrate, a gate overlapping the well, a source region disposed at one side of the gate, a buried layer disposed in the well, and a drain region or a drift region contacting the buried layer.

Lateral double-diffused MOS transistor having deeper drain region than source region

A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.

Method of fabricating a LDMOS device having a first well depth less than a second well depth

A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed in the well; an oxide layer that insulates a gate region from the drain region; a first conductivity type buried layer formed in the well; a second conductivity type drift region surrounding the buried layer; and a second conductivity type TOP region formed between the buried layer and the oxide layer.

Semiconductor power device and method of fabricating the same

Growing community of inventors

Cheongju-si, South Korea

Jin Woo Moon