The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 20, 2013
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0634 (2013.01); H01L 29/0847 (2013.01); H01L 29/0878 (2013.01); H01L 29/7835 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01);
Abstract
Provided is a semiconductor power device. The semiconductor power device includes a well disposed in a substrate, a gate overlapping the well, a source region disposed at one side of the gate, a buried layer disposed in the well, and a drain region or a drift region contacting the buried layer.