Hanam-si, South Korea

Jin-Ho Bin


Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2012 - 2021)
  • Hanam-si, KR (2022 - 2023)
  • Hanam-si Gyeonggi-do, KR (2024)

Company Filing History:


Years Active: 2012-2025

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9 patents (USPTO):Explore Patents

Title: Jin-Ho Bin: Innovator in Semiconductor Technology

Introduction

Jin-Ho Bin is a prominent inventor based in Hanam-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His innovative work focuses on the development of advanced semiconductor devices and memory technologies.

Latest Patents

Among his latest patents, Jin-Ho Bin has developed a vertical semiconductor device and a method for fabricating the same. This invention involves forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, followed by etching to create an opening. A non-conformal blocking layer is then applied, which is converted into a conformal blocking layer through the adsorption of a deposition inhibitor. Additionally, he has patented a memory device and a method for fabricating it. This method includes forming an alternating stack of dielectric and sacrificial layers, creating a vertical opening, and converting sacrificial layers into blocking layers through an oxidation process.

Career Highlights

Jin-Ho Bin has worked with notable companies in the semiconductor industry, including SK Hynix Inc. and Hynix Semiconductor Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor fabrication and memory device technology.

Collaborations

Throughout his career, Jin-Ho Bin has collaborated with talented individuals such as Il-Young Kwon and Tae-Hong Gwon. These collaborations have contributed to the advancement of his innovative projects and patents.

Conclusion

Jin-Ho Bin is a distinguished inventor whose work in semiconductor technology has led to numerous patents and advancements in the field. His contributions continue to shape the future of memory devices and semiconductor fabrication methods.

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