The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 26, 2019
SK Hynix Inc., Gyeonggi-do, KR;
Jin-Ho Oh, Gyeonggi-do, KR;
Su-Hyun Lee, Gyeonggi-do, KR;
Tae-Hong Gwon, Gyeonggi-do, KR;
Il-Young Kwon, Seoul, KR;
Jin-Ho Bin, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating the three dimensional (3D), non-volatile memory (NVM) device includes: forming a stacked structure including a plurality of interlayer insulating layers and a plurality of first material layers which are alternately stacked; forming at least one channel hole penetrating through the stack structure; forming a second material layer along the at least one channel hole; trimming a surface of the second material layer; oxidizing a whole of the trimmed second material layer to form at least a portion of a charge blocking layer; and forming a charge storage layer and a tunnel insulating layer over the charge blocking layer.