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For the Inventor, By the Inventor

Boise, ID, United States of America

Jie Li

USPTO Granted Patents = 17 

Average Co-Inventor Count = 5.6

ph-index = 4

Forward Citations = 42(Granted Patents)


Company Filing History:

goldMedal16 out of 38,002 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 54,780 
 
Intel Corporation
 patents

Years Active: 2017-2025

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17 patents (USPTO):Explore Patents
1. 12408341 - Memory arrays, and methods of forming memory arrays (2025-09-02),
2. 11404571 - Methods of forming NAND memory arrays (2022-08-02),
3. 11302708 - Memory arrays, and methods of forming memory arrays (2022-04-12),
4. 11195854 - Integrated structures and methods of forming integrated structures (2021-12-07),
5. 11011538 - Transistors and arrays of elevationally-extending strings of memory cells (2021-05-18),
6. 10971360 - Methods of forming a channel region of a transistor and methods used in forming a memory array (2021-04-06),
7. 10854747 - NAND memory arrays, devices comprising semiconductor channel material and nitrogen, and methods of forming NAND memory arrays (2020-12-01),
8. 10749041 - Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man (2020-08-18),
9. 10580792 - Integrated structures and methods of forming integrated structures (2020-03-03),
10. 10559466 - Methods of forming a channel region of a transistor and methods used in forming a memory array (2020-02-11),
11. 10497715 - Memory arrays (2019-12-03),
12. 10483407 - Methods of forming sin, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods (2019-11-19),
13. 10446681 - NAND memory arrays, and devices comprising semiconductor channel material and nitrogen (2019-10-15),
14. 10297611 - Transistors and arrays of elevationally-extending strings of memory cells (2019-05-21),
15. 10096610 - Polysilicon doping controlled 3D NAND etching (2018-10-09),

Title: The Innovative Journey of Jie Li

Introduction: Jie Li, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Jie Li holds several patents in the areas of artificial intelligence, renewable energy, and sustainable agriculture, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Jie Li has successfully brought several of his inventions from concept to market, revolutionizing industries along the way.

Collaborations: Throughout his career, Jie Li has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the global market, solidifying his reputation as a visionary inventor.

Conclusion: Jie Li's relentless pursuit of innovation and his commitment to creating a positive impact on society through his inventions make him a true pioneer in the world of technology. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

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