Jianmin Huang

San Carlos, CA, United States of America

Jianmin Huang

This inventor holds 136 USPTO granted patents and 30 published patent applications and 9 EPO patents, primarily in Memory Management (CPC class G06F12-0246). Top assignees: Micron Technology Incorporated, Sandisk Technologies Inc.. Active years: 2012-2026.

USPTO Granted Patents = 136 

% Patents Active = 91.2

 

Average Co-Inventor Count = 3.9

ph-index = 13

Forward Citations = 943(Granted Patents)

Forward Citations (Not Self Cited) = 850(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Sunnyvale, CA (US) (2012 - 2015)
  • Milpitas, CA (US) (2016)
  • San Carlos, CA (US) (2013 - 2024)

Company Filing History:


Years Active: 2012-2026

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Areas of Expertise:
Data Migration
Cache Optimization
Memory Sub-System
Error Control
Virtual Indexing
Garbage Collection
Superblock Construction
Randomization Techniques
Power Loss Recovery
Memory Access
Erase Blocks
Storage Management
136 patents (USPTO):Explore Patents

Title: Jianmin Huang: Pioneering Innovator with 115 Patents

Introduction:

Jianmin Huang is a highly accomplished inventor, known for his remarkable contributions to the field of memory devices and storage technologies. With an impressive portfolio of 115 patents, Jianmin's innovative solutions have pushed the boundaries of what is possible in the industry. This article delves into his latest patents, career highlights, and notable collaborations.

Latest Patents:

Jianmin Huang's recent patents include groundbreaking advancements in memory device management and virtual block utilization. Two significant patents stand out as examples of his ingenuity:

1. UFS Based Idle Time Garbage Collection Management:

This patent introduces intelligent SLC cache migration processes within NAND memory devices. It describes a method to efficiently move data written to the SLC cache to MLC storage, based on a set of rules evaluated using the device's state. By leveraging various NAND operational parameters, this innovation optimizes the timing and amount of data migration, enhancing overall device performance.

2. Memory Device Virtual Blocks Using Half Good Blocks:

This patent showcases a method for utilizing non-defective portions of memory blocks containing defects. Instead of disabling an entire block, the technology selectively disables only portions affected by defects while salvaging the remaining functional sections. This approach maximizes the usable capacity of memory devices, effectively increasing their lifespan.

Career Highlights:

Jianmin Huang has made significant contributions to the industry through his work with renowned companies. Some of his notable career highlights include:

1. Micron Technology Incorporated:

Jianmin has applied his expertise while working at Micron Technology Incorporated, a leading provider of advanced memory and storage solutions. His contributions have fueled innovation within the company, enabling the development of groundbreaking technologies.

2. SanDisk Technologies Inc. (now part of Western Digital):

Jianmin's impact extended to SanDisk Technologies Inc., a pioneer in flash memory storage solutions. His work has helped lay the foundation for advancements in memory technology, establishing him as a formidable figure in the field.

Collaborations:

Throughout his career, Jianmin Huang has had the privilege of collaborating with esteemed colleagues, further amplifying his contributions. Two of his noteworthy collaborators include:

1. Xiangang Luo:

Xiangang Luo, an esteemed professional in the field, has collaborated with Jianmin on several projects. Their combined expertise has led to breakthroughs and innovations, cementing their reputations as thought leaders in memory device development.

2. Kulachet Tanpairoj:

Kulachet Tanpairoj's partnership with Jianmin has yielded remarkable results. Together, they have explored novel approaches to memory device optimization and have introduced several cutting-edge concepts.

Conclusion:

Jianmin Huang's remarkable career, distinguished by 115 patents, exemplifies his relentless pursuit of innovation and excellence in the domain of memory devices and storage technologies. His latest patents, career highlights, and collaborations showcase the breadth of his contributions to the field. As an industry pioneer, Jianmin continues to leave a lasting impact on the future of memory device technology.

Profile summary based on public USPTO records.
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