IDiyas

For the Inventor, By the Inventor

Hwaseong-si, South Korea

Ji-Hoon Lim

USPTO Granted Patents = 10

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Suwon-si, KR (2012 - 2013)
  • Hwaseong-si, KR (2020 - 2023)

Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2012-2023

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10 patents (USPTO):Explore Patents
1. 11790988 - Nonvolatile memory device including temperature compensation circuit (2023-10-17),
2. 11100990 - Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof (2021-08-24),
3. 11069406 - Nonvolatile memory device including temperature compensation circuit (2021-07-20),
4. 10867673 - Nonvolatile memory device including transfer element (2020-12-15),
5. 10811094 - Memory devices and operation methods thereof (2020-10-20),
6. 10613571 - Compensation circuit for generating read/program/erase voltage (2020-04-07),
7. 8483001 - Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator (2013-07-09),
8. 8284624 - Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator (2012-10-09),
9. 8213237 - Charge pump and semiconductor device having the same (2012-07-03),
10. 8169268 - Oscillation circuit and semiconductor device having the same (2012-05-01),

Title: Innovator Spotlight: Ji-Hoon Lim from Hwaseong-si, KR

Introduction

Ji-Hoon Lim is a prominent inventor based in Hwaseong-si, South Korea, known for his significant contributions to memory device technology. With a total of 10 patents to his name, Lim has established himself as a vital player in the field of nonvolatile memory devices.

Latest Patents

Among his recent innovations, Ji-Hoon Lim has developed a groundbreaking patent for a nonvolatile memory device that includes a temperature compensation circuit. This device functions by utilizing a differential current driver that processes differential signals to create compensation currents, thereby improving memory performance under varying temperatures. Another notable patent focuses on a memory device designed to prevent multi-turn on of memory cells during reading. This technology employs sophisticated control mechanisms to enhance the reliability and efficiency of memory operations.

Career Highlights

Ji-Hoon Lim has spent a significant part of his career at leading tech firms including Samsung Electronics, where he played a crucial role in advancing memory technologies. His work has not only contributed to the company's product offerings but has also influenced the broader landscape of memory device innovation.

Collaborations

Throughout his career, Lim has had the opportunity to collaborate with talented professionals such as Bilal Ahmad Janjua and Venkataramana Gangasani. These collaborations have enabled him to combine expertise, fostering an environment ripe for innovation and creative problem-solving.

Conclusion

In summary, Ji-Hoon Lim stands out as a dedicated inventor whose work in nonvolatile memory devices has paved the way for advancements in technology. With his impressive portfolio of patents and strong collaborative spirit, Lim continues to influence the field of memory solutions, making lasting contributions that will benefit future innovations in the industry.

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