The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Mar. 10, 2020
Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ji-Hoon Lim, Hwaseong-si, KR;
Jongryul Kim, Dangjin-si, KR;
Taehui Na, Seoul, KR;
Venkataramana Gangasani, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A memory device includes a memory cell connected to a word line and a bit line, a row driver that drives the word line to a precharge level, a column driver that drives the bit line to a first target level, a sense amplifier that senses a first sensing level of the word line after the first target level is applied to the memory cell, and a read control circuit that controls the column driver so that a second target level different from the first target level is selectively applied to the memory cell depending on the first sensing level sensed by the sense amplifier.