The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Jun. 11, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Venkataramana Gangasani, Suwon-si, KR;

Ji-hoon Lim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0023 (2013.01); G11C 2213/72 (2013.01);
Abstract

A memory device may include a memory cell array including a plurality of memory cells and a compensation resistor electrically connected to the memory cell array. The compensation resistor may generate a cell current compensating for a voltage drop generated in a parasitic resistor of a signal line connected to at least one memory cell of the plurality of memory cells. The compensation circuit may control a magnitude of resistance of a compensation resistor upon receiving an address corresponding to the memory cell. The compensation circuit may increase a magnitude of the cell current based on adjusting the magnitude of resistance of the compensation resistor to be substantially equal to a resistance value of the parasitic resistor.


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