The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Aug. 17, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Bilal Ahmad Janjua, Suwon-si, KR;
Vivek Venkata Kalluru, Suwon-si, KR;
June-Hong Park, Seongnam-si, KR;
Jungyu Lee, Hwaseong-si, KR;
Ji-Hoon Lim, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/72 (2013.01); G11C 2213/75 (2013.01); G11C 2213/79 (2013.01);
Abstract
A nonvolatile memory device includes a bank and a program current generator. The bank includes a memory cell array that includes phase change memory cells storing data based on a program current, and the transfer element transfers the program current to the memory cell array through current mirroring. The program current generator generates the program current based on a reference current.