Georgetown, TX, United States of America

Jerry D Hayes

This inventor holds 33 USPTO granted patents, primarily in Integrated Circuit Testing. Top assignee: International Business Machines Corporation. Active years: 2000-2014.


% Patents Active = 18.2

Average Co-Inventor Count = 3.2

ph-index = 9

Forward Citations = 402(Granted Patents)


Location History:

  • Mllton, VT (US) (2008)
  • Milton, VT (US) (2000 - 2011)
  • Austin, TX (US) (2012)
  • Georgetown, TX (US) (2008 - 2014)

Company Filing History:


Years Active: 2000-2014

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Areas of Expertise:
Parameter Variation
Bias Temperature Instability
Statistical Characterization
Timing Analysis
Electro-Migration
Capacitive Loads
Threshold Voltage
Reliability Structures
Device Capacitance
Wiring Routes
I/O Floor Planning
AC Performance Tuning
33 patents (USPTO):Explore Patents

Title: Jerry D. Hayes: Innovator and Patent Holder from Georgetown, TX

Introduction

Jerry D. Hayes is a distinguished inventor based in Georgetown, Texas, known for his innovative contributions to technology. With an impressive portfolio consisting of 33 patents, Hayes has made significant strides in the field, particularly in methods and systems related to parameter variation statistics and bias temperature instability measurements.

Latest Patents

One of Hayes' most notable recent patents is titled "Method and Test System for Fast Determination of Parameter Variation Statistics." This invention provides a novel mechanism to determine process variation and parameter statistics using low computing power and readily available test equipment. The test array, which consists of individually selectable devices, is controlled by a computer to sequentially stimulate each device. The resulting voltage or current waveform is analyzed, with the rms value indicating the standard deviation of parameter variation and the DC value representing the mean parameter value.

Another significant patent by Hayes is the "Test Circuit for Bias Temperature Instability Recovery Measurements." This method and test circuit accurately characterize threshold voltage changes resulting from negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). The invention allows for the study of bias temperature instability recovery profiles and shifts, employing a delay line formed from elements specifically designed to measure changes in threshold voltage with remarkable precision.

Career Highlights

Jerry D. Hayes is currently affiliated with International Business Machines Corporation (commonly known as IBM), where he continues to contribute to cutting-edge innovations. His work at IBM has positioned him as a key player in developing methodologies that enhance the understanding of critical electronic components and their behaviors.

Collaborations

Throughout his career, Hayes has collaborated with several esteemed colleagues, including Anthony D. Polson and Peter Anton Habitz. These partnerships have fostered an environment of innovation and have led to impactful advancements in their respective fields.

Conclusion

Jerry D. Hayes exemplifies the spirit of innovation through his numerous patents and contributions to the technology sector. His relentless pursuit of excellence has paved the way for significant advancements in understanding parameter variations and stress-induced behaviors in electronic devices, solidifying his legacy as a notable inventor in the industry.

Profile summary based on public USPTO records.
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