Jennifer H Morrison

Title: Jennifer H Morrison: Innovator in Tunable Antifuse Technology

Introduction

Jennifer H Morrison is a prominent inventor based in Chandler, AZ (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of tunable antifuse elements. With a total of 7 patents to her name, her work has had a considerable impact on the industry.

Latest Patents

Among her latest patents is the invention of tunable antifuse elements. This technology includes a substrate material with an active area formed in a surface, a gate electrode positioned above the active area, and a dielectric layer disposed between the gate electrode and the active area. The dielectric layer features a tunable stepped structure. During operation, a voltage applied between the gate electrode and the active area creates a current path through the dielectric layer, leading to a rupture in a designated region. The tunability of the dielectric layer is achieved by varying the stepped layer thicknesses and the geometry of the layer. Another notable patent is the tunable antifuse element and method of manufacture, which outlines a similar structure and operational principles.

Career Highlights

Jennifer has worked with notable companies in the semiconductor industry, including Freescale Semiconductor, Inc. and Motorola Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking innovations in her field.

Collaborations

Throughout her career, Jennifer has collaborated with talented individuals such as Moaniss Zitouni and Patrice M Parris. These collaborations have further enriched her work and expanded her contributions to technology.

Conclusion

Jennifer H Morrison is a distinguished inventor whose work in tunable antifuse technology has paved the way for advancements in semiconductor applications. Her innovative spirit and dedication to her craft continue to inspire future generations of inventors.