The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Mar. 21, 2007
Edouard D. Defresart, Tempe, AZ (US);
Richard J. Desouza, Tempe, AZ (US);
Xin Lin, Phoenix, AZ (US);
Jennifer H. Morrison, Chandler, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
Moaniss Zitouni, Gilbert, AZ (US);
Edouard D. Defresart, Tempe, AZ (US);
Richard J. Desouza, Tempe, AZ (US);
Xin Lin, Phoenix, AZ (US);
Jennifer H. Morrison, Chandler, AZ (US);
Patrice M. Parris, Phoenix, AZ (US);
Moaniss Zitouni, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus are provided for a MOSFET () exhibiting increased source-drain breakdown voltage (BVdss). Source (S) () and drain (D) () are spaced apart by a channel () underlying a gate () and one or more carrier drift spaces (') serially located between the channel () and the source (′) or drain (′). A buried region (′) of the same conductivity type as the drift space (′) and the source (′) or drain (′) is provided below the drift space (′), separated therefrom in depth by a narrow gap (′) and ohmically coupled to the source (′) or drain (′). Current flow () through the drift space produces a potential difference (Vt) across this gap (′). As the S-D voltage (Vo) and current (, Io) increase, this difference (Vt) induces high field conduction between the drift space (′) and the buried region (′) and diverts part (, It) of the S-D current (, Io) through the buried region (′) and away from the near surface portions of the drift space (′) where breakdown generally occurs. Thus, BVdss is increased.