The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 23, 2003
Anthony Ciancio, Gilbert, AZ (US);
Mark D. Griswold, Chandler, AZ (US);
Amudha R. Irudayam, Chandler, AZ (US);
Jennifer H. Morrison, Chandler, AZ (US);
Anthony Ciancio, Gilbert, AZ (US);
Mark D. Griswold, Chandler, AZ (US);
Amudha R. Irudayam, Chandler, AZ (US);
Jennifer H. Morrison, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.