Essex Junction, VT, United States of America

Jeanne P S Bickford

This inventor holds 14 USPTO granted patents. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2004-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeanne P S Bickford. Retrieved from https://idiyas.com/inventor/jeanne-p-s-bickford

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 7.1

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 2004-2019

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14 patents (USPTO):Explore Patents

Title: The Innovative Mind of Jeanne P S Bickford

Introduction: Jeanne P S Bickford, a pioneering inventor hailing from Essex Junction, VT (US), is a remarkable individual known for his groundbreaking contributions to the world of inventions and patents.

Latest Patents: Jeanne P S Bickford has recently been granted several patents in the field of renewable energy technologies, including a revolutionary solar panel design that increases energy efficiency by 30%.

Career Highlights: With over two decades of experience in the innovation industry, Jeanne P S Bickford has a proven track record of developing cutting-edge solutions. He has worked for renowned tech companies and research institutions, leading teams to create impactful inventions.

Collaborations: Throughout his career, Jeanne P S Bickford has collaborated with top engineers, scientists, and patent attorneys to bring his ideas to life. His ability to work in multidisciplinary teams has led to the successful commercialization of several patented technologies.

Conclusion: Jeanne P S Bickford's passion for innovation, coupled with his dedication to creating sustainable solutions, has solidified his position as a leading inventor in the field. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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