The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9880892 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 30, 2018

Filed:

Feb. 24, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeanne P. S. Bickford, Essex Junction, VT (US);

Nazmul Habib, Colchester, VT (US);

Baozhen Li, South Burlington, VT (US);

Pascal A. Nsame, Essex Town, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G06F 11/00 (2006.01); H01L 21/66 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G06F 11/008 (2013.01); H01L 22/10 (2013.01); H01L 22/20 (2013.01); G01R 31/2849 (2013.01);
Abstract

A method of managing semiconductor manufacturing defects, the method including: determining a cumulative aging parameter for each of a plurality of first IC products produced with a particular manufacturing line, the cumulative aging parameter being dependent on a product operating condition; calculating an observed defect rate for the plurality of first IC products based on a difference between a predicted value of a aging parameter and the cumulative aging parameter for each of the plurality of first IC products; and adjusting a manufacturing reliability model for the particular manufacturing line in response to the observed defect rate being different from an initial predicted defect rate for the plurality of first IC products wherein the manufacturing reliability model reestablishes the initial predicted defect rate.


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