Company Filing History:

8 out of 993

Novellus Systems Incorporated

patents

1 out of 1

Novelius Systems, Inc.

patent

Years Active: 2001-2011

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8034725 - Method of eliminating small bin defects in high throughput TEOS films (2011-10-11),

2. 7704894 - Method of eliminating small bin defects in high throughput TEOS films (2010-04-27),

3. 7052988 - Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing (2006-05-30),

4. 6844612 - Low dielectric constant fluorine-doped silica glass film for use in integrated circuit chips and method of forming the same (2005-01-18),

5. 6720251 - Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing (2004-04-13),

6. 6716765 - Plasma clean for a semiconductor thin film deposition chamber (2004-04-06),

7. 6541400 - Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer (2003-04-01),

8. 6524956 - Method for controlling the grain size of tungsten films (2003-02-25),

9. 6303518 - Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers (2001-10-16),

Title: Jason L Tian: Innovator in High Throughput PECVD Processes

Introduction

Jason L Tian is a prominent inventor based in Milpitas, CA (US). He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of processes that enhance the quality of thin films. With a total of 9 patents to his name, Tian's work has had a substantial impact on the industry.

Latest Patents

One of Jason L Tian's latest patents is titled "Method of eliminating small bin defects in high throughput TEOS films." This invention provides a high throughput Plasma-Enhanced Chemical Vapor Deposition (PECVD) process for depositing Tetraethyl Orthosilicate (TEOS) films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The invention involves dedicating a first station for temperature soak while flowing purge gas. By stopping the flow of reactant gas and flowing the purge gas, the method eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

Career Highlights

Throughout his career, Jason L Tian has worked with notable companies such as Novellus Systems Incorporated and Novellus Systems, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor processes and contribute to innovative solutions in the field.

Collaborations

Some of Jason L Tian's coworkers include Bart Jan Van Schravendijk and M Ziaul Karim. Their collaboration has likely fostered an environment of innovation and creativity, leading to advancements in their respective projects.

Conclusion

Jason L Tian is a distinguished inventor whose work in high throughput PECVD processes has made a significant impact on the semiconductor industry. His innovative methods continue to enhance the quality of TEOS films, showcasing his dedication to advancing technology.

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