The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Sep. 30, 1999
Applicant:
Inventors:
Jason L. Tian, Milpitas, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Bart J. van Schravendijk, Sunnyvale, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
An improved CVD process, preferably a PECVD process, for forming a low-dielectric-constant insulating material on a semiconductor substrate, or on and/or under a metal barrier, or etch stop layer of SiNx, Ta(N), TiN, WNx and others. Specifically, the improved PECVD process provides for deposition of an N,O+SiF,+SiH,based FSG film having improved characteristics, which may be accomplished in any conventional PECVD chamber, but preferably in a dual frequency PECVD chamber.