The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Nov. 20, 2006
Jon Henri, West Linn, OR (US);
Xingyuan Tang, West Linn, OR (US);
Jason Tian, West Linn, OR (US);
Kevin Gerber, Portland, OR (US);
Arul N. Dhas, Sherwood, OR (US);
Jon Henri, West Linn, OR (US);
Xingyuan Tang, West Linn, OR (US);
Jason Tian, West Linn, OR (US);
Kevin Gerber, Portland, OR (US);
Arul N. Dhas, Sherwood, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for stationeliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.