The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Feb. 05, 2004
Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
Bart Van Schravendijk, Sunnyvale, CA (US);
Ming LI, Pleasanton, CA (US);
Jason Tian, Milpitas, CA (US);
Tom Mountsier, San Jose, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Bart van Schravendijk, Sunnyvale, CA (US);
Ming Li, Pleasanton, CA (US);
Jason Tian, Milpitas, CA (US);
Tom Mountsier, San Jose, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.