The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2003

Filed:

Feb. 09, 2000
Applicant:
Inventors:

Jason L. Tian, Milpitas, CA (US);

Harald Te Nijenhuis, Fremont, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H05H 1/02 ; H05H 1/24 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H05H 1/02 ; H05H 1/24 ;
Abstract

An improved process for depositing a robust fluorosilicate glass film on a substrate in a chamber includes maintaining a total pressure in the chamber of less than about 1.7 torr, introducing vapor phase chemicals such as N , SiF , SiH , and N O into the chamber, and reacting the vapor-phase chemicals with sufficiently supplied energy to deposit a thin film layer of the fluorosilicate glass on the substrate. Advantageously, the deposited fluorosilicate glass films are chemically, mechanically, and thermally stable without additional processing. Also advantageously, the films are deposited uniformly at rates greater than about 5000 Angstroms per minute with dielectric constants of about 3.4 to about 3.9.


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