The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Apr. 29, 2003
Jason Tian, Milpitas, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Cong DO, San Jose, CA (US);
Jason Tian, Milpitas, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Cong Do, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.