Haymarket, VA, United States of America

Jason F Ross

USPTO Granted Patents = 13 

Average Co-Inventor Count = 1.9

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Fairfax, VA (US) (2008 - 2012)
  • Haymarket, VA (US) (2014 - 2024)

Company Filing History:


Years Active: 2008-2024

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13 patents (USPTO):

Title: Jason F Ross: Innovator with a Passion for Radiation Hardening and Level Shifting

Introduction:

In the world of technological advancements, innovators like Jason F Ross have significantly contributed to pushing the boundaries of what's possible. Hailing from Haymarket, VA (US), Jason F Ross has earned a reputation as a visionary inventor in the field of radiation hardening and level shifting circuits. With a remarkable portfolio of 12 patents and numerous career achievements, he has made a lasting impact on the industry.

Latest Patents:

Among Jason F Ross's notable patents, one stands out as a groundbreaking innovation in DRAM technology. His patent titled "Method for radiation hardening synchronous DRAM" introduces a technique that implements on-chip Error Detection And Correction (EDAC) in synchronous Dynamic Random Access Memory (DRAM). This approach utilizes interleaved single chip Static Random Access Memory (SRAM) cells and employs bit registers for effective interfacing. Additionally, the patent incorporates the use of column multiplexers (MUX) and EDAC logic to ensure accurate error detection and correction during READ and WRITE bursts.

Another recent patent by Jason F Ross focuses on developing a cold spare tolerant radiation-hardened generic level shifter circuit. This invention tackles the challenges of voltage level shifting between different domains while maintaining reliability and resilience in radiation-intense environments. By utilizing specific pull-up resistors, pull-up assist circuits, pass-gate MOSFETs, and a cleverly designed one-shot circuit, this circuit enables efficient and secure voltage level shifting.

Career Highlights:

Jason F Ross's career has flourished as a part of BAE Systems Information and Electronic Systems Integration Inc. (BAE Systems IESIS). With a commitment to pushing the bounds of technology, BAE Systems IESIS has provided the ideal environment for Jason to explore his innovative ideas. During his tenure, Jason has successfully obtained 12 patents, further consolidating his position as an industry leader in radiation hardening and level shifting circuitry.

Collaborations:

Collaborations play a crucial role in making significant advancements, and Jason F Ross has been fortunate to work with talented individuals in his field. Notable among his coworkers are Dale A Rickard and John T Matta. Their collective expertise and collaborative efforts have contributed to the successful realization of numerous projects, further enhancing Jason's reputation as an outstanding innovator.

Conclusion:

Jason F Ross, an accomplished inventor and prolific contributor to the field of innovations, has left an indelible mark on the world of radiation hardening and level shifting circuitry. Through his groundbreaking patents and collaborations, he has significantly advanced these areas. As we look toward the future, we can expect Jason F Ross to continue pushing the boundaries of technological possibilities, providing innovative solutions to the challenges of our ever-evolving world.

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