Jang Gn Yun

Title: Jang Gn Yun: Innovator in Memory and Semiconductor Technologies

Introduction

Jang Gn Yun is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the fields of memory devices and semiconductor technologies. With a total of 10 patents to his name, Yun continues to push the boundaries of innovation in his field.

Latest Patents

One of his latest inventions is a memory device that features gate electrode layers stacked on a substrate. This device includes a plurality of unit electrodes extending in a first direction, along with connecting electrodes that link these unit electrodes. Additionally, the memory device incorporates channel structures that extend through the gate electrode layers, first common source lines interposed between the unit electrodes, and second common source lines that are strategically placed between the first common source lines.

Another notable patent is for a three-dimensional semiconductor device. This device consists of a stacked structure that includes a lower group of vertically stacked gate electrodes and an upper group of similarly arranged gate electrodes. The vertical structure of this device features a core pattern, a buffer portion, and a surrounding semiconductor layer, showcasing Yun's innovative approach to semiconductor design.

Career Highlights

Jang Gn Yun is currently employed at Samsung Electronics Co., Ltd., where he applies his expertise in developing cutting-edge technologies. His work has been instrumental in advancing the capabilities of memory and semiconductor devices, making him a key figure in the industry.

Collaborations

Throughout his career, Yun has collaborated with talented individuals such as Sun Young Kim and Su Jin Park. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Jang Gn Yun is a distinguished inventor whose work in memory devices and semiconductor technologies has made a lasting impact. His innovative patents and collaborations continue to shape the future of technology.