The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Nov. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Su Jin Park, Gwangmyeong-si, KR;

Sun Young Kim, Seongnam-si, KR;

Jang Gn Yun, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/528 (2013.01); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02);
Abstract

A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.


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