Location History:
- Baltimore, MD (US) (1978 - 1980)
- Catonsville, MD (US) (1977 - 1987)
Company Filing History:
Years Active: 1977-1987
Title: The Innovative Contributions of James R Cricchi
Introduction
James R Cricchi is a notable inventor based in Catonsville, MD (US), recognized for his significant contributions to semiconductor technology. With a total of 15 patents, Cricchi has developed innovative techniques that enhance the performance and efficiency of electronic devices.
Latest Patents
Cricchi's latest patents include the "Direct Moat Self-Aligned Field Oxide Technique," which outlines a process for producing CMOS bulk circuits. This technique allows for various treatments of the field oxide, including the channel edge, and introduces a self-aligned p-field implant. The process involves multiple steps, such as growing a field oxide layer, depositing and etching materials, and implanting field regions. Another significant patent is the "Common Memory Gate Non-Volatile Transistor Memory," which describes a non-volatile semiconductor memory that incorporates both fixed and variable threshold transistors in each memory cell. This design allows for efficient row selection and data storage, enabling block erase capabilities.
Career Highlights
Throughout his career, James R Cricchi has worked with prominent organizations, including Westinghouse Electric Corporation and the United States of America as represented by the Secretary of the Air Force. His work has significantly impacted the field of semiconductor technology, leading to advancements in memory and circuit design.
Collaborations
Cricchi has collaborated with notable colleagues such as Michael D Fitzpatrick and Franklyn C Blaha, contributing to various projects that have furthered innovation in the industry.
Conclusion
James R Cricchi's inventive spirit and dedication to advancing semiconductor technology have resulted in numerous patents that continue to influence the field. His work exemplifies the importance of innovation in driving technological progress.