The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1978
Filed:
Mar. 11, 1977
James R Cricchi, Catonsville, MD (US);
Michael D Fitzpatrick, Linthicum, MD (US);
Westinghouse Electric Corp., Pittsburgh, PA (US);
Abstract
A complementary MOS voltage level shift circuit which can be used as a memory buffer circuit, for example, is disclosed. The circuit utilizes both N-channel depletion mode devices and P-channel enhancement mode MOS devices preferably fabricated on silicon-on-sapphire. Both types of devices are operated with only negative or zero gate-source voltage in order to minimize threshold voltage shifts in radiation environments. A capacitive voltage level shifting technique is used to obtain push-pull operation with driver type devices in order to reduce power consumption and increase switching speed while feeding into a capacitive load. Load type devices are used to prevent discharge of a capacitive load.