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For the Inventor, By the Inventor

Dallas, TX, United States of America

James M McDavid

This inventor holds 14 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1985-1993.

USPTO Granted Patents = 14

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 9

Forward Citations = 265(Granted Patents)


Location History:

  • Houston, TX (US) (1985 - 1989)
  • Dallas, TX (US) (1986 - 1993)

Company Filing History:

goldMedal14 out of 29,854 
 
Texas Instruments Corporation
 patents

Years Active: 1985-1993

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14 patents (USPTO):Explore Patents
1. 5192704 - Method and apparatus for a filament channel pass gate ferroelectric (1993-03-09),
2. 5144746 - Method of assembling compact silicon module for high density integrated (1992-09-08),
3. 5136534 - Method and apparatus for a filament channel pass gate ferroelectric (1992-08-04),
4. 5040052 - Compact silicon module for high density integrated circuits (1991-08-13),
5. 4922320 - Integrated circuit metallization with reduced electromigration (1990-05-01),
6. 4878100 - Triple-implanted drain in transistor made by oxide sidewall-spacer method (1989-10-31),
7. 4874720 - Method of making a metal-gate MOS VLSI device (1989-10-17),
8. 4744858 - Integrated circuit metallization with reduced electromigration (1988-05-17),
9. 4736233 - Interconnect and contact system for metal-gate MOS VLSI devices (1988-04-05),
10. 4672419 - Metal gate, interconnect and contact system for VLSI devices (1987-06-09),
11. 4665295 - Laser make-link programming of semiconductor devices (1987-05-12),
12. 4641417 - Process for making molybdenum gate and titanium silicide contacted MOS (1987-02-10),
13. 4628588 - Molybdenum-metal mask for definition and etch of oxide-encapsulated (1986-12-16),
14. 4507853 - Metallization process for integrated circuits (1985-04-02),

Title: The Innovative Contributions of James M McDavid

Introduction

James M McDavid is a prominent inventor based in Dallas, TX (US), known for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, McDavid has made remarkable advancements that enhance the functionality and efficiency of electronic systems.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Method and apparatus for a filament channel pass gate ferroelectric." This patent describes a memory cell that includes a filament channel transistor and a ferroelectric capacitor formed on a semiconductor substrate. The design features a substantially cylindrical channel filament that is oriented perpendicular to the substrate surface, providing innovative memory solutions. Another notable patent is the "Method of assembling compact silicon module for high density integrated," which focuses on densely packing integrated circuit chips to create efficient electronic systems or large memory modules. This invention allows for flip-mounted semiconductor chips that maintain thermal contact with adjacent silicon boards, enhancing heat conduction.

Career Highlights

James M McDavid has built a successful career at Texas Instruments Corporation, where he has played a vital role in developing cutting-edge technologies. His work has not only contributed to the company's success but has also influenced the broader semiconductor industry.

Collaborations

Throughout his career, McDavid has collaborated with talented individuals such as David R Clark and Dirk N Anderson. These partnerships have fostered innovation and have led to the development of several impactful technologies.

Conclusion

James M McDavid's contributions to the field of semiconductor technology are noteworthy and continue to influence advancements in electronic systems. His innovative patents and collaborative efforts exemplify the spirit of invention and the pursuit of technological excellence.

Profile summary based on public USPTO records.
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