The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1987
Filed:
Sep. 03, 1985
Applicant:
Inventor:
James M McDavid, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29591 ; 156656 ;
Abstract
Molybdenum-gate transistors with self-aligned, silicided source/drain regions are made by a process that avoids unwanted etching of the molybdenum of the gate when the unreacted metal used for siliciding is removed. The molybdenum gate is protected by encapsulating with a cap oxide and sidewall oxide; this encapsulation is applied in a manner to seal the interfaces between the two oxides. The oxides may be dual layer--first plasma deposited then phosphorus doped CVD oxide. A dilute sulphuric acid etch may be used to remove unreacted titanium employed for the siliciding.